2SD1611(2001) 查看數據表（PDF） - Panasonic Corporation
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2SD1611 Datasheet PDF : 3 Pages
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Power Transistors
80
70
60
50
(1)
40
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=1.3W)
30
20
10
(2)
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VBE(sat) — IC
100
IC/IB=50
30
10
3
TC=–25˚C
1
100˚C
25˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
Area of safe operation (ASO)
100
30
10 ICP
IC
3
1
Non repetitive pulse
TC=25˚C
1ms
300ms
t=10µs
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
IC — VCE
5
TC=25˚C
4
IB=8mA
3
4.0mA
3.5mA
3.0mA
2
2.5mA
2.0mA
1
1.5mA
0
0123456
Collector to emitter voltage VCE (V)
hFE — IC
105
VCE=2V
104
2SD1611
VCE(sat) — IC
100
IC/IB=50
30
10
3
25˚C
TC=100˚C
1
–25˚C
0.3
0.1
0.03
0.01
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
Cob — VCB
104
IE=0
f=1MHz
TC=25˚C
103
103
TC=100˚C
102
25˚C
–25˚C
10
0.01 0.03 0.1 0.3 1 3 10
Collector current IC (A)
102
10
1
0.1 0.3 1 3 10 30 100
Collector to base voltage VCB (V)
Rth(t) — t
103
(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink
102
(1)
(2)
10
1
10–1
10–2
10–4
10–3
10–2
10–1
1
10
102
103
104
Time t (s)
2
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