2SD2101 查看數據表（PDF） - SavantIC Semiconductor
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2SD2101 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2101
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=50mA; IC=0
V(BR)CBO Collector-base breakdown voltage
IC=0.1mA; IC=0
V(BR)CEO Collector-emitter breakdown voltage IC=25mA;RBE=;
VCEO(SUS) Collector-emitter sustaining voltage IC=5A; L=5mH
VCE(sat-1) Collector-emitter saturation voltage IC=5A ;IB=10mA
VCE(sat)-2 Collector-emitter saturation voltage IC=10A ;IB=100mA
VBE(sat-1) Base-emitter saturation voltage
IC=5A ;IB=10mA
VBE(sat-2) Base-emitter saturation voltage
ICBO
Collector cut-off current
ICEO
Collector cut-off current
hFE
DC current gain
IC=10A ;IB=100mA
VCB=180V; IE=0
VCE=180V; RBE=;
IC=5A ; VCE=3V
MIN TYP. MAX UNIT
7
V
200
V
200
V
170
V
1.5
V
3.0
V
2.0
V
3.5
V
10
µA
50
µA
1500
2
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