D2337 查看數據表（PDF） - Renesas Electronics

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D2337

Silicon NPN Triple Diffused

Renesas Electronics 

2SD2337

Absolute Maximum Ratings (Ta = 25°C)

Item

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Collector peak current

Collector power dissipation

Junction temperature

Storage temperature

Note: 1. Value at TC = 25°C.

Symbol

VCBO

VCEO

VEBO

IC

I C(peak)

PC

PC * 1

Tj

Tstg

Ratings

Unit

200

V

150

V

6

V

2

A

5

A

1.5

W

20

150

°C

–45 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min Typ

Collector to emitter breakdown V(BR)CEO 150 —

voltage

Emitter to base breakdown

V(BR)EBO

6

—

voltage

Collector cutoff current

I CBO

—

—

DC current transfer ratio

hFE1*1

60

—

hFE2

60

—

Collector to emitter saturation VCE(sat)

—

—

voltage

Base to emitter voltage

VBE

—

—

Notes: 1. The 2SD2337 is grouped by hFE1 as follows.

2. Pulse test.

B

C

D

60 to 120 100 to 200 160 to 320

Max Unit

—

V

—

V

1

µA

320

—

3.0 V

1.0 V

Test conditions

IC = 50 mA, RBE = ∞

IE = 5 mA, IC = 0

VCB = 120 V, IE = 0

VCE = 4 V, IC = 50 mA

VCE = 10 V, IC = 500 mA*2

IC = 500 mA, IB = 50 mA*2

VCE = 4 V, IC = 50 mA

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