2SD313(2005) 查看數據表（PDF） - Unisonic Technologies

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2SD313
(Rev.:2005)

NPN EPITAXIAL PLANAR TRANSISTOR

Unisonic Technologies 

2SD313

TYPICAL CHARACTERISTICS

1000

DC Current Gain

100

NPN SILICON TRANSISTOR

Saturation Voltage vs. Collector Current

10000

IC=10IB

1000

10

100

1

10

100

1000

10000

Collector Current(mA)

10000

V BE(SAT) vs. IC

IC=10IB

10

10

100

1000

Collector Current(mA)

10000

SOA

10

1000

1

100

10

100

1000

Collector Current(mA)

10000

10000

VBE(ON) vs. IC

VCE=2V

0.1

1

10

100

Collector to Emitter Voltage (V)

1000

100

10

100

1000

Collector Current(mA)

10000

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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