2SD669 查看數據表（PDF） - Weitron Technology
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2SD669 Datasheet PDF : 5 Pages
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2SD669/2SD669A
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Typ
Collector-Emitter Breakdown Voltage
IC = 1.0mA, IE = 0
V(BR)CBO
180
-
Collector-Base Breakdown Voltage
IC = 10mA, IB = 0
2SD669
2SD669A
V(BR)CEO
120
160
-
Emitter-Base Breakdown Voltage
IC = 0, IE = 1.0mA
V(BR)EBO
5.0
-
Collector Cutoff Current
VCB = 160V, IE=0
Emitter Cutoff Current
VEB = 4.0V, IC=0
ICBO
-
-
IEBO
-
-
ON CHARACTERISTICS
DC Current Gain
VCE = 5.0V, IC = 150mA
2SD669
hFE(1)
60
-
2SD669A
60
VCE = 5.0V, IC = 500mA
Collector-Emitter Saturation Voltage
IC = 500mA, IB = 50mA
hFE(2)
30
-
VCE(sat)
-
-
Base-Emitter ON Voltage
VCE = 5.0V, IC = 150mA
Transition frequency
VCE = 5.0V, IC = 150mA
Collecotr Output Capacitance
VCB = 10V, IE = 0, f = 1MHz
VBE(ON)
-
-
fT
-
140
Cob
-
14
CLASSIFICATION OF hFE(1)
Rank
Range
2SD669
2SD669A
B
60-120
60-120
C
100-200
100-200
Max
Unit
-
V
-
V
-
V
10
µA
10
mA
320
200
-
-
1.0
V
1.5
V
-
MHz
-
pF
D
160-320
-
WEITRON
2/5
http://www.weitron.com.tw
18-Oct-05
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