2SK2788 查看數據表（PDF） - Hitachi -> Renesas Electronics
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2SK2788 Datasheet PDF : 9 Pages
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2SK2788
Body to Drain Diode Reverse
Recovery Time
500
200
100
50
20
10
di / dt = 50 A / µs
5
0.1 0.2
VGS = 0, Ta = 25 °C
0.5 1 2
5 10
Reverse Drain Current I DR (A)
1000
500
200
100
50
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
Ciss
Coss
20
Crss
10
0
10 20 30 40
50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
100
20
ID=2A
80
V DD = 10 V
16
25 V
50 V
60 VDS
12
40
VGS
8
20
V DD = 50 V
4
25 V
10 V
0
0
2
4
6
8
10
Gate Charge Qg (nc)
Switching Characteristics
100
50
t d(off)
20
tf
tr
10
t d(on)
5
2
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty < 1 %
1
0.1 0.2 0.5 1 2
5 10
Drain Current I D (A)
6
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