2SK709 查看數據表（PDF） - Toshiba
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2SK709 Datasheet PDF : 4 Pages
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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK709
High Frequency Amplifier Applications
AM High Frequency Amplifier Applications
Audio Frequency Amplifier Applications
2SK709
Unit: mm
· High |Yfs|: |Yfs| = 25 mS (typ.)
· Low Ciss: Ciss = 7.5 pF (typ.)
· Low noise
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
VGDS
IG
PD
Tj
Tstg
Rating
Unit
-20
V
10
mA
300
mW
125
°C
-55~125
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1A
Weight: 0.21 g (typ.)
Characteristics
Symbol
Test Condition
Gate leakage current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
IGSS
VGS = -15 V, VDS = 0
V (BR) GDS VDS = 0, IG = -100 mA
IDSS
VDS = 5 V, VGS = 0
(Note)
VGS (OFF)
ïYfsï
VDS = 5 V, ID = 1 mA
VDS = 5 V, VGS = 0, f = 1 kHz
Ciss
VDS = 5 V, VGS = 0, f = 1 MHz
Crss
VDG = 5 V, ID = 0, f = 1 MHz
VDS = 5 V, ID = 1 mA
NF
Rg = 1 kW, f = 1 kHz
Note: IDSS classification GR: 6~12 mA, BL: 10~20 mA, V: 16~32 mA
Min Typ. Max Unit
¾
¾ -1.0 nA
-20 ¾
¾
V
6
¾
32
mA
¾
¾ -2.5
V
15
25
¾
mS
¾
7.5
10
pF
¾
2
3
pF
¾
0.5
3
dB
1
2003-03-27
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