6N135 查看數據表（PDF） - Toshiba
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6N135 Datasheet PDF : 8 Pages
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6N135,6N136
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
(Note 1)
IF
Pulse forward current
(Note 2)
IFP
Total pulse forward current
(Note 3)
IFPT
Reverse voltage
VR
Diode power dissipation
(Note 4)
PD
Output current
IO
Peak output current
IOP
Emitter−base reverse voltage (pin 5−7)
VEB
Supply voltage
VCC
Output voltage
VO
Base current (pin 7)
IB
Output power dissipation
(Note 5)
Po
Operating temperature range
Topr
Storage temperature range
Tstg
Lead solder temperature (10s)
(Note 6)
Tsol
Isolation voltage
(Note 7)
BVS
25
50
1
5
45
8
16
5
−0.5~15
−0.5~15
5
100
−55~100
−55~125
260
2500
mA
mA
A
V
mW
mA
mA
V
V
V
mA
mW
°C
°C
°C
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1)
(Note 2)
(Note 3)
(Note 4)
(Note 5)
(Note 6)
(Note 7)
Derate 0.8mA above 70°C.
50% duty cycle, 1ms pulse width.
Derate 1.6mA / °C above 70°C.
Pulse width 1μs, 300pps.
Derate 0.9mW / °C above 70°C.
Derate 2mW / °C above 70°C.
Soldering portion of lead: Up to 2mm from the body of the device.
R.H. ≤ 60%, AC / 1min.
2
2007-10-01
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