74HC1G00GV 查看數據表（PDF） - NXP Semiconductors.
零件编号
产品描述 (功能)
生产厂家
74HC1G00GV Datasheet PDF : 10 Pages
| |||
NXP Semiconductors
74HC1G00; 74HCT1G00
2-input NAND gate
11. Dynamic characteristics
Table 8. Dynamic characteristics
GND = 0 V; tr = tf ≤ 6.0 ns; All typical values are measured at Tamb = 25 °C. For test circuit see Figure 6
Symbol Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C Unit
Min Typ Max Min
Max
For type 74HC1G00
tpd
propagation delay A and B to Y; see Figure 5
VCC = 2.0 V; CL = 50 pF
VCC = 4.5 V; CL = 50 pF
VCC = 5.0 V; CL = 15 pF
VCC = 6.0 V; CL = 50 pF
CPD
power dissipation VI = GND to VCC
capacitance
[1]
-
-
-
-
[2]
-
25
115
-
9
23
-
7
-
-
8
20
-
19
-
-
135 ns
27 ns
-
ns
23 ns
-
pF
For type 74HCT1G00
tpd
propagation delay A and B to Y; see Figure 5
VCC = 4.5 V; CL = 50 pF
VCC = 5.0 V; CL = 15 pF
CPD
power dissipation VI = GND to VCC − 1.5 V
capacitance
[1]
-
12
24
-
-
10
-
-
[2]
-
21
-
-
27 ns
-
ns
-
pF
[1] tpd is the same as tPLH and tPHL.
[2] CPD is used to determine the dynamic power dissipation PD (µW).
PD = CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz; fo = output frequency in MHz
CL = output load capacitance in pF
VCC = supply voltage in Volts
∑ (CL × VCC2 × fo) = sum of outputs
12. Waveforms
A, B input
VM
tPHL
tPLH
Y output
VM
mna100
For HC1G: VM = 0.5 × VCC; VI = GND to VCC
For HCT1G: VM = 1.3 V; VI = GND to 3.0 V
Fig 5. Input to output propagation delays
VCC
PULSE
VI
GENERATOR
VO
DUT
RT
CL
mna101
Test data is given in Table 8.
CL = Load capacitance including jig and probe
capacitance.
RT = Termination resistance should be equal to
output impedance Zo of the pulse generator.
Fig 6. Load circuitry for switching times
74HC_HCT1G00_4
Product data sheet
Rev. 04 — 11 July 2007
© NXP B.V. 2007. All rights reserved.
5 of 10
Share Link: 