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AD7866(Rev0) 查看數據表(PDF) - Analog Devices

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AD7866 Datasheet PDF : 20 Pages
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AD7866
TIMING SPECIFICATIONS1
(VDD = 2.7 V to 5.25 V, VDRIVE = 2.7 V to 5.25 V, VREF = 2.5 V; TA = TMIN to TMAX, unless otherwise noted.)
Parameter
Limit at
TMIN, TMAX
Unit
Description
fSCLK 2
tCONVERT
tQUIET
t2
t33
t43
t5
t6
t7
t84
t94
10
20
16 × tSCLK
800
50
10
25
40
0.4 tSCLK
0.4 tSCLK
10
25
10
50
kHz min
MHz max
ns max
ns max
ns max
ns min
ns max
ns max
ns min
ns min
ns min
ns max
ns min
ns max
tSCLK = 1/fSCLK
fSCLK = 20 MHz
Minimum Time Between End of Serial Read and Next Falling Edge of CS
CS to SCLK Setup Time
Delay from CS Until DOUTA and DOUTB Three-State Disabled
Data Access Time After SCLK Falling Edge. VDRIVE Ն 3 V, CL = 50 pF;
VDRIVE < 3 V, CL = 25 pF
SCLK Low Pulsewidth
SCLK High Pulsewidth
SCLK to Data Valid Hold Time
CS Rising Edge to DOUTA, DOUTB, High Impedance
SCLK Falling Edge to DOUTA, DOUTB, High Impedance
SCLK Falling Edge to DOUTA, DOUTB, High Impedance
NOTES
1Sample tested at 25°C to ensure compliance. All input signals are specified with tr = tf = 5 ns (10% to 90% of V DRIVE) and timed from a voltage level of 1.6 V.
2Mark/Space ratio for the CLK input is 40/60 to 60/40.
3Measured with the load circuit of Figure 1 and defined as the time required for the output to cross 0.8 V or 2.0 V.
4t8, t9 are derived from the measured time taken by the data outputs to change 0.5 V when loaded with the circuit of Figure 1. The measured number is then extrapolated
back to remove the effects of charging or discharging the 50 pF capacitor. This means that the times t 8 and t9 quoted in the timing characteristics are the true bus
relinquish times of the part and are independent of the bus loading.
Specifications subject to change without notice.
200A
IOL
TO
OUTPUT
PIN
CL
50pF
200A
IOH
1.6V
Figure 1. Load Circuit for Digital Output
Timing Specifications
ABSOLUTE MAXIMUM RATINGS1
(TA = 25oC unless otherwise noted)
AVDD to AGND . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
DVDD to DGND . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +7 V
VDRIVE to DGND . . . . . . . . . . . . . . . –0.3 V to DVDD + 0.3 V
VDRIVE to AGND . . . . . . . . . . . . . . . . –0.3 V to AVDD + 0.3 V
AVDD to DVDD . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +0.3 V
AGND to DGND . . . . . . . . . . . . . . . . . . . . –0.3 V to +0.3 V
Analog Input Voltage to AGND . . . . –0.3 V to AVDD + 0.3 V
Digital Input Voltage to DGND . . . . . . . . . . . –0.3 V to +7 V
VREF to AGND . . . . . . . . . . . . . . . . . –0.3 V to AVDD + 0.3 V
Digital Output Voltage to DGND . . –0.3 V to VDRIVE + 0.3 V
Input Current to Any Pin Except Supplies2 . . . . . . . . ± 10 mA
Operating Temperature Range
Commercial (A, B Versions) . . . . . . . . . . . . . –40oC to +85oC
Storage Temperature Range . . . . . . . . . . . . –65oC to +150oC
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150oC
TSSOP Package, Power Dissipation . . . . . . . . . . . . . 450 mW
JA Thermal Impedance . . . . . . . . . . . . 143°C/W (TSSOP)
JC Thermal Impedance . . . . . . . . . . . . . 45°C/W (TSSOP)
Lead Temperature, Soldering
Vapor Phase (60 secs) . . . . . . . . . . . . . . . . . . . . . . . 215°C
Infrared (15 secs) . . . . . . . . . . . . . . . . . . . . . . . . . . 220°C
ESD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 kV
NOTES
1 Stresses above those listed under Absolute Maximum Ratings may cause permanent
damage to the device. This is a stress rating only; functional operation of the device
at these or any other conditions above those listed in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
2 Transient currents of up to 100 mA will not cause SCR latch up.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although
the AD7866 features proprietary ESD protection circuitry, permanent damage may occur on
devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are
recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
–4–
REV. 0

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