APT10078SFLL 查看數據表（PDF） - Advanced Power Technology

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APT10078SFLL

POWER MOS 7® FREDFET

Advanced Power Technology  

DYNAMIC CHARACTERISTICS

APT10078BFLL_SFLL

Symbol Characteristic

Test Conditions

MIN TYP MAX UNIT

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VGS = 0V

VDS = 25V

f = 1 MHz

2525

430

pF

75

Qg

Total Gate Charge 3

Qgs Gate-Source Charge

Qgd Gate-Drain ("Miller") Charge

VGS = 10V

VDD = 500V

ID = 14A @ 25°C

95

12

nC

60

td(on)

tr

td(off)

tf

Eon

Eoff

Eon

Eoff

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Turn-on Switching Energy 6

Turn-off Switching Energy

Turn-on Switching Energy 6

Turn-off Switching Energy

RESISTIVE SWITCHING

9

VGS = 15V

VDD = 500V

ID = 14A @ 25°C

8

ns

30

RG = 1.6Ω

9

INDUCTIVE SWITCHING @ 25°C

VDD = 667V VGS = 15V

355

ID = 14A, RG = 3Ω

75

µJ

INDUCTIVE SWITCHING @ 125°C

VDD = 667V VGS = 15V

740

ID = 14A, RG = 3Ω

95

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN TYP MAX UNIT

IS

Continuous Source Current (Body Diode)

ISM Pulsed Source Current 1 (Body Diode)

14 Amps

56

VSD Diode Forward Voltage 2 (VGS = 0V, IS = ID -14A)

dv/dt

Peak Diode Recovery dv/dt 5

trr

Reverse Recovery Time

(IS = ID -14A, di/dt = 100A/µs)

Tj = 25°C

Tj = 125°C

1.3 Volts

18 V/ns

210

ns

710

Reverse Recovery Charge

Qrr

(IS = ID -14A, di/dt = 100A/µs)

Tj = 25°C

Tj = 125°C

1.0

µC

3.6

Peak Recovery Current

IRRM

(IS = ID -14A, di/dt = 100A/µs)

Tj = 25°C

Tj = 125°C

9.8

Amps

14

THERMAL CHARACTERISTICS

Symbol Characteristic

MIN TYP MAX UNIT

RθJC

RθJA

Junction to Case

Junction to Ambient

0.31

40

°C/W

1 Repetitive Rating: Pulse width limited by maximum junction

temperature

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

4 Starting Tj = +25°C, L = 13.27mH, RG = 25Ω, Peak IL = 14A

5 dv/dt numbers reflect the limitations of the test circuit rather than the

device itself. IS ≤ ID-14A di/dt ≤ 700A/µs VR ≤ 1000 TJ ≤ 150°C

6 Eon includes diode reverse recovery. See figures 18, 20.

APT Reserves the right to change, without notice, the specifications and inforation contained herein.

0.35

0.30

0.25

0.20

0.15

0.10

0.05

0

10-5

0.9

0.7

0.5

Note:

0.3

0.1

SINGLE PULSE

0.05

t1

t2

Duty Factor D = t1/t2

Peak TJ = PDM x ZθJC + TC

10-4

10-3

10-2

10-1

1.0

RECTANGULAR PULSE DURATION (SECONDS)

FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION

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