APT8024JFLL 查看數據表（PDF） - Microsemi Corporation
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APT8024JFLL Datasheet PDF : 5 Pages
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114
50
OPERATION HERE
LIMITED BY RDS (ON)
100µS
10
5
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
1
10
100
800
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
ID = 29A
10mS
12
VDS= 160V
8
VDS= 400V
VDS= 640V
4
0
0
50
100 150 200 250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
140
120
td(off)
100
80
60
VDD = 533V
RG = 5Ω
TJ = 125°C
L = 100µH
40
20
td(on)
0
0
10
20
30
40
50
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
2000
1500
VDD = 533V
RG = 5Ω
TJ = 125°C
L = 100µH
EON includes
diode reverse recovery.
1000
500
Eon
Eoff
0
5 10 15 20 25 30 35 40 45 50
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
20,000
10,000
APT8024JFLL
Ciss
1,000
Coss
100
Crss
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3 0.5 0.7 0.9 1.1 1.3 1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
80
VDD = 533V
70 RG = 5Ω
TJ = 125°C
60 L = 100µH
50
40
tf
30
tr
20
10
0
0
10
20
30
40
50
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
4000
VDD = 533V
3500 ID = 29A
3000
TJ = 125°C
L = 100µH
EON includes
Eoff
diode reverse recovery.
2500
2000
Eon
1500
1000
500
0
0 5 10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
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