APTM100H18F 查看數據表（PDF） - Advanced Power Technology
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APTM100H18F Datasheet PDF : 6 Pages
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Delay Times vs Current
200
160
td(off)
120
VDS=670V
RG=2.5Ω
80
TJ=125°C
L=100µH
40
td(on)
0
10
30
50
70
90
ID, Drain Current (A)
Switching Energy vs Current
5
VDS=670V
4 RG=2.5Ω
TJ=125°C
L=100µH
3
Eon
Eoff
2
1
0
10
30
50
70
90
ID, Drain Current (A)
Operating Frequency vs Drain Current
250
200
ZVS
ZCS
150
100
VDS=670V
D=50%
RG=2.5Ω
50 TJ=125°C
Tc=75°C
Hard
switching
0
10 15 20 25 30 35 40
ID, Drain Current (A)
APTM100H18F
Rise and Fall times vs Current
80
VDS=670V
RG=2.5Ω
tf
60 TJ=125°C
L=100µH
40
tr
20
0
10
30
50
70
90
ID, Drain Current (A)
Switching Energy vs Gate Resistance
7
VDS=670V
6 ID=43A
Eoff
5 TJ=125°C
L=100µH
4
3
Eon
2
1
0
0
5
10
15
20
Gate Resistance (Ohms)
Source to Drain Diode Forward Voltage
1000
100
TJ=150°C
TJ=25°C
10
1
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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