AS6C4008 查看數據表（PDF） - Alliance Semiconductor

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AS6C4008

512K X 8 BIT LOW POWER CMOS SRAM

Alliance Semiconductor 

$8*867 2009

AS6C4008

512K X 8 BIT LOW POWER CMOS SRAM

DATA RETENTION CHARACTERISTICS

PARAMETER

VCC for Data Retention

Data Retention Current

Chip Disable to Data

Retention Time

Recovery Time

tRC* = Read Cycle Time

SYMBOL TEST CONDITION

VDR CE# ≧ VCC - 0.2V

IDR

VCC = 1.5V

-LL

CE# ≧ VCC - 0.2V -LLE/-LLI

tCDR

See Data Retention

Waveforms (below)

tR

DATA RETENTION WAVEFORM

MIN.

1.5

-

-

0

tRC*

TYP.

-

2

2

-

-

MAX.

5.5

30

30

-

-

UNIT

V

µA

µA

ns

ns

Vcc

CE#

Vcc(min.)

tCDR

VIH

VDR ≧ 1.5V

CE# ≧ Vcc-0.2V

Vcc(min.)

tR

VIH

AUG09 v1.4

Alliance Memory Inc

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