AS8E512K8 查看數據表（PDF） - Austin Semiconductor

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AS8E512K8

512K x 8 EEPROM EEPROM Module

Austin Semiconductor 

Austin Semiconductor, Inc.

EEPROM

AS8E512K8

ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC READ OPERATING

CONDITIONS (-55oC<TA<+125oC; Vcc = 5V +10%)





























   

   

   

     

     


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A.C. READ WAVEFORMS(1,2,3,4)

ADDRESS

ADDRESS VALID

CE\

OE\

OUTPUT

HIGH Z

t

CE

tOE

tACC

tDF

tOH

OUTPUT

VALID

NOTES:

1. CE\ may be delayed up to tACC-tCE after the address transi-

tion without inpact on tACC.

2. OE\ may be delayed up to tCE-tOE after the falling edge of

CE\ without inpact on tCE or by tACC-tOE after an address

change without inpact on tACC.

3. tDF is specified from OE\ or CE\ whichever occurs first

(CL = 5pF).

4. This parameter is characterized and is not 100% tested.

5. A17 and A18 must remain valid through the WE\ and CE\

low pulse.

INPUT TEST WAVEFORMS AND MEASUREMENT

LEVEL FOR AC TEST CONDITIONS

OUTPUT TEST LOAD

5.0V

Input Pulse Levels

Input Rise and Fall Tim es

Input and O utput

Tim ing Reference Levels

0V to 3.0V

5nS

1.5V

1.8K

1.3K

100pF

AS8E512K8

Rev. 3.1 6/05

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

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