BA885 查看數據表（PDF） - Siemens AG

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产品描述 (功能)

生产厂家

BA885

Silicon PIN Diode

Siemens AG 

BA 885

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Forward voltage

VF

IF = 50 mA

Reverse current

IR

VR = 30 V

Diode capacitance

CT

VR = 10 V, f = 1 MHz

VR = 0 V, f = 100 MHz

Forward resistance

rf

f = 100 MHz

IF = 1.5 mA

IF = 10 mA

Zero bias conductance

gp

VR = 0 V, f = 100 MHz

Series inductance

LS

min.

–

–

–

–

–

–

–

–

Values

Unit

typ.

max.

–

1.1

V

–

50

nA

pF

0.28

0.6

0.23

0.4

Ω

22

40

5

7

70

–

µS

2

–

nH

Diode capacitance CT = f (VR)

f = 1 MHz / 100 MHz

Forward resistance rf = f (IF)

f = 100 MHz

Semiconductor Group

2

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