BAS16LT1 查看數據表（PDF） - Willas Electronic Corp.
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BAS16LT1 Datasheet PDF : 3 Pages
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WILLAS
FM120-M+
BAS16LT1THRU
S1O.0ATS-U2R3FAPClEaMsOtUicNT-ESCnHcOaTTpKsYuBAlaRRteIERDRiEoCdTIeFIsERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
• Batch process design, excellent power dissipation offers
Package outline
• Lb+oe1wt0tepVrrroefvilee8r2ss0uerΩlfeaacke2a.m0goekucnutrerdenatpapnlidcathtieornmianlorredseisr ttaonce.
optimize board space.
•
•
Low power loss,
High current cap
high efficie
100 µH
ability, low
fnoIcrFyw.
ar
d
0.1µF
voltage drop.
• High surge capability.
tr
tp
t
10%
SOD-123H
IF
0.146(3.7)
t 0.130(3.3)
rr
t0.012(0.3) Typ.
•
•
UGlutraardhriignhg-sfopreoevd0e.sr1vwµoitFlctahginegp. rotecDt.iUo.nT..
90%
• Silic5Po0UnLΩeSOEpUitTaPxUiaTl planar chip, metal silicon5Sj0AuMnΩcPINtLiIoPNUnGT.
• LeadG-EfNreEeRApTaOrtRs meet environmental standOaSrCdIsLLoOfSCOPE
V R INPUT SIGNAL
IR
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
i
R(REC)
=0.10.071m(1A.8)
0.056(1.4)
OUTPUT PULSE
(I F = I R = 10 mA; MEASURED
at i R(REC) = 1.0 mA)
Mechanical daNtoates: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I F ) of 10 mA.
• Epoxy : UL94-V0 rateNdoftleasm: 2e. rIneptaurtdpaunlste is adjusted so I R(peak) is equal to 10 mA.
• Case : Molded plasticN,oSteOsD: 3-1. 2t p3»Ht rr
0.031(0.8) Typ.
• Terminals :Plated terFmiignuarlse, 1so. lRdeecraobvleerpyeTr MimILe-SETqDui-v7a5l0e,nt Test Circuit
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
100
• Mounting Position : Any
Dimensions in inches and (millimeters)
10
T A = 150°C
• Weight : ApprToxA=im85a°tCed 0.011 gram
1.0
10 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless othTeAr=w–is4e0°sCpecified.
Single phase half wave, 60Hz, resistive of inductive load.
0.1
T A = 125°C
T A = 85°C
For capacitive load, derate current by 20%
1.0
RATINGS
T A= 25°C
T A = 55°C
SYMBOL FM120-MH FM130-M0.H01FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Marking Code
12
13
14
15
16
18
10
115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
T6A0= 25°C 80
100
150
200 Vo
Maximum0R.1MS Voltage
VRMS
14
21 0.001 28
35
42
56
70
105
140 Vo
0.2
0.4
0.6
Maximum DC Blocking Voltage
0.8
1.0
VDC
1.2
20
30
0 40
1050
6200
8300
10400
15500
200 Vo
Maximum Average ForwaVrdFR, FecOtiRfieWdACRuDrreVnOt LTAGE (VOILOTS)
Figure 2. Forward Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
superimposed on rated load (JEDEC method)
V R , REVERS1.E0 VOLTAGE (VOLTS)
Am
Figure 3. Leakage Current
30
Am
Typical Thermal Resistance (Note 2)
0.68
Typical Junction Capacitance (Note 1)
Operating Temperature Range
RΘJA
CJ
TJ
-55 to +125
40
℃
120
P
-55 to +150
℃
Storage Temperature Range
0.64
TSTG
- 65 to +175
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
0.60
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
VF
0.50
0.70
0.85
0.9
0.92 Vo
Maximum Average Reverse Current at @T A=25℃
IR
Rated DC Blocking Voltage
@T A=125℃
0.56
0.5
mA
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient0.52
0
2
4
6
8
V R , REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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