BAS16LT1 查看數據表（PDF） - Willas Electronic Corp.
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BAS16LT1 Datasheet PDF : 3 Pages
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WILLAS
FM120-M+
BAS16LT1THRU
S1O.0ATS-U2R3FAPClEaMsOtUicNT-ESCnHcOaTTpKsYuBAlaRRteIERDRiEoCdTIeFIsERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Feat
• Batch
ures
process
design,
excellent
power
d
issipSatiOonTof-fe2r3s
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
.122(3.10)
• Guardring for overvoltage protection.
• Ultra high-speed switching.
.106(2.70)
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
•
Polarity
:
Indicated
.080(2.04)
by cathode band
.070(1.78)
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
.008(0.20)
Dime.n0si0on3s(in0i.n0ch8e)s and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load,.0de0r4at(e0c.u1r0re)nMt bAyX20.%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
12
13
14
15
16
18
10
115 120
VRRM
20
30
40
50
60
80
100
150
200 V
.02V0R(M0S.50) 14
21
28
35
42
56
70
105
140 Vo
.012V(D0C.30) 20
30
40
50
60
80
100
150
200 Vo
IO
1.0
A
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
30
A
superimposed on rated load (JEDEC method) Dimensions in inches and (millimeters)
Typical Thermal Resistance (Note 2)
RΘJA
40
℃
Typical Junction Capacitance (Note 1)
CJ
120
P
Operating Temperature Range
Storage Temperature Range
0.037
0.95
TJ
TSTG
-55 to +1205.037
0.95
-55 to +150
- 65 to +175
℃
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
VF
0.50
0.70
0.85
0.9
0.92 V
IR
0.079
0.5
2.0
10
mA
NOTES:
0.035
1- Measured at 1 MHZ and applied reverse voltage o0f.94.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.031
0.8
inches
mm
2012-06
2012-1
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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