BAS21S 查看數據表（PDF） - Galaxy Semi-Conductor

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BAS21S

Surface mount switching diode

Galaxy Semi-Conductor 

Production specification

Surface mount switching diode

BAS21/A/C/S

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Characteristic

Symbol

Min

MAX UNIT Test Condition

Reverse breakdown Voltage

Reverse Leakage Current

Forward voltage

Diode Capacitance

Reverse Recovery Time

V(BR)R

IR

VF

CD

trr

250

-

V

IR=100μA

-

0.1

15

μA

VR=200V,Tj=25℃

VR=200V,Tj=100℃

-

1000

mV

IF=100mA

1250

IF=200mA

-

5.0

pF VR=0V,f=1.0MHz

-

50

ns

IF=IR=10mA

Irr=0.1*IR

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

C028

Rev.B

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