BAS21 查看數據表（PDF） - Shanghai Lunsure Electronic Tech

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BAS21

Small Signal Diodes 250mW

Shanghai Lunsure Electronic Tech 

BAS19 thru BAS21

Electrical Characteristics (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Forward Voltage

VF

IF = 100mA

IF = 200mA

—

—

1.0

V

—

—

1.25

V

Leakage Current

IR

VR = VRmax

VR = VRmax; Tj = 150°C

—

—

—

100

nA

—

100

µA

Dynamic Forward Resistance

rf

IF = 10mA

—

5

—

Ω

Capacitance

Ctot

VR = 0

f = 1MHz

—

—

5

pF

Reverse Recovery Time (see figures)

trr

IF = 30mA, IR = 30mA

Irr = 3mA, RL = 100Ω

—

—

50

ns

(1)Device on fiberglass substrate, see layout (SOT-23).

Test Circuit and Waveforms (BAS19, BAS20, BAS21)

Ω

Test circuit

Input Signal

- total pulse duration

- duty factor

- rise time of reverse pulse

- reverse pulse duration

Oscilloscope - rise time

- cicuit capitance*

*C = oscilloscope input capactitance + parasitic capacitance

Layout for RΘJA test

Thickness: Fiberglass 0.059 in. (1.5 mm)

Copper leads 0.012 in. (0.3 mm)

tp(tot) = 2µs

δ = 0.0025

tr = 0.6ns

tp = 100ns

tr = 0.35ns

C < 1pF

Input signal

Waveforms; IR = 3 mA

Output signal

0.30 (7.5)

0.12 (3)

0.59 (15)

0.03 (0.8)

0.47 (12)

.04 (1) .08 (2)

.04 (1)

.08 (2)

0.2 (5)

0.06 (1.5)

0.20 (5.1)

Dimensions in inches (millimeters)

www.cnelectr.com

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