BAV 99
Thermal Resistance
Junction - ambient2)
Junction - soldering point
Rth JA
Rth JS
≤ 500
K/W
≤ 360
Electrical Characteristics per Diode
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Breakdown voltage
I(BR) = 100 µA
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 50 mA
IF = 150 mA
Reverse current
VR = 70 V
VR = 25 V, TA = 150 ˚C
VR = 70 V, TA = 150 ˚C
AC characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
Reverse recovery time
IF = 10 mA, IR = 10 mA, RL = 100 Ω
measured at IR = 1 mA
Symbol
Values
Unit
min. typ. max.
V(BR)
70
–
VF
–
–
–
–
–
–
–
–
IR
–
–
–
–
–
–
–
V
mV
715
855
1000
1250
µA
2.5
30
50
CD
–
–
1.5 pF
trr
–
–
6
ns
2)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
2