BAV99-AL6-R 查看數據表（PDF） - Unisonic Technologies

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BAV99-AL6-R

HIGH CONDUCTANCE ULTRA FAST DIODE

Unisonic Technologies 

BAV99

DIODE

ABSOLUTE MAXIMUM RATINGS* (Ta = 25℃, unless otherwise specified.)

PARAMETER

SYMBOL

RATINGS

UNIT

Working Inverse Voltage

WIV

70

V

Average Rectified Current

IF(AV)

200

mA

DC Forward Current

IFM

600

mA

Recurrent Peak Forward Current

IFRM

700

mA

Non-repetitive Peak

Pulse width = 1.0 second

Forward Surge Current Pulse width = 1.0 microsecond

IFSM

1.0

2.0

A

Total Device Dissipation

SOT-23

SOT-363

PD

350

mW

200

mW

Junction Temperature

Storage Temperature

TJ

+125

℃

TSTG

-40 ~ +150

℃

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Note: 1. These ratings are based on a maximum junction temperature of 150°C

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty

cycle operations.

3. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

Thermal Resistance Junction to Ambient

SOT-23

SOT-363

SYMBOL

θJA

RATINGS

357

625

UNIT

℃/W

℃/W

ELECTRICAL CHARACTERISTICS (Ta = 25℃, unless otherwise specified.)

PARAMETER

Breakdown Voltage

Maximum Instantaneous Forward

Voltage

Peak Forward Voltage

Maximum Instantaneous Reverse

Current

Diode Capacitance

Reverse Recovery Time

SYMBOL

TEST CONDITIONS

VR IR = 100µA

IF = 1.0mA

VFM

IF = 10mA

IF = 50mA

IF = 150mA

VSM IF = 10mA, tR = 20nS

VR = 70V

IRM VR = 25V, Ta = 150°C

VR = 70V, Ta = 150°C

CO VR = 0, f = 1.0MHz

tRR

IF = IR = 10mA, IRR = 1.0mA

RL = 100Ω

MIN TYP MAX UNIT

70

V

715 mV

855 mV

1.0

V

1.25 V

1.75 V

2.5

30

µA

50

1.5 pF

6.0 ns

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R601-005,B

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