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BB181 查看數據表(PDF) - NXP Semiconductors.

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BB181
NXP
NXP Semiconductors. NXP
BB181 Datasheet PDF : 6 Pages
1 2 3 4 5 6
NXP Semiconductors
BB181
VHF variable capacitance diode
4. Marking
Table 3. Marking codes
Type number
BB181
Marking code
N
5. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VR
reverse voltage
IF
forward current
Tstg
storage temperature
Tj
junction temperature
Min Max Unit
- 30 V
- 20 mA
55 +150 °C
55 +150 °C
6. Characteristics
Table 5. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
IR
reverse current
rs
diode series resistance
Cd
diode capacitance
see Figure 2
VR = 30 V
VR = 30 V; Tj = 85 °C
f = 470 MHz at Cd = 9 pF
f = 1 MHz; see Figure 1 and
Figure 3
Cd(0V5)/Cd(28V)
VR = 0.5 V
VR = 28 V
diode capacitance ratio (0.5 V to 28 V) f = 1 MHz
Min Typ Max Unit
-
-
10 nA
-
-
200 nA
-
-
3
8
-
0.7 -
12 -
17 pF
1.055 pF
16
BB181_3
Product data sheet
Rev. 03 — 16 February 2009
© NXP B.V. 2009. All rights reserved.
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