BC807-16 查看數據表（PDF） - Weitron Technology

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BC807-16

General Purpose Transistor PNP Silicon

Weitron Technology 

BC807-16/BC807-25

BC807-40

1000

100

VCE = -1.0 V

TA = 25 C

10

-0.1

-1.0

-10

-100

IC , COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

-1000

-1.0

TJ = 25 C

-0.8

-0.6

IC =

-500 mA

-0.4

IC = -300 mA

-0.2

IC = -100 mA

IC = -10 mA

0

-0.01

-0.1

-1.0

-10

-100

IB , BASE CURRENT (mA)

Figure 2. Saturation Region

-1.0

TA = 25 C

-0.8

VBE(sat) @ I C/IB = 10

VBE(on)@ V CE = -1.0 V

-0.6

-0.4

-0.2

0

-1.0

VCE(sat)@ I C/IB = 10

-10

-100

IC , COLLECTOR CURRENT (mA)

Figure 3. "On" Voltages

-1000

+1.0

VC for VCE(sat)

0

-1.0

-2.0

VB for VBE

-1.0

-10

-100

IC , COLLECTOR CURRENT

Figure 4. T emperature Coefficients

100

10

-1000

1.0

-0.1

Cib

Cob

-1.0

-10

VR , REVERSE VOLTAGE (VOLTS)

Figure 5. Capacitances

-100

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