BC817 查看數據表（PDF） - General Semiconductor

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BC817

Small Signal Transistors (NPN)

General Semiconductor 

BC817 THRU BC818

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Max.

DC Current Gain

at VCE = 1 V, IC = 100 mA

Current Gain Group-16 hFE

-25 hFE

-40 hFE

at VCE = 1 V, IC = 300 mA

-16 hFE

-25 hFE

-40 hFE

100

–

160

–

250

–

60

–

100

–

170

–

Thermal Resistance Junction Substrate

Backside

RthSB

–

–

250

400

600

–

–

–

3201)

Thermal Resistance Junction to Ambient Air

RthJA

–

–

4501)

Collector Saturation Voltage

at IC = 500 mA, IB = 50 mA

Base-Emitter Voltage

at VCE = 1 V, IC = 300 mA

VCEsat

–

–

0.7

VBE

–

–

1.2

Collector-Emitter Cutoff Current

at VCE = 45 V

at VCE = 25 V

at VCE = 25 V, Tj = 150 °C

BC817 ICES

–

BC818 ICES

–

ICES

–

Emitter-Base Cutoff Current

at VEB = 4 V

IEBO

–

Gain-Bandwidth Product

at VCE = 5 V, IC = 10 mA, f = 50 MHz

fT

–

–

100

–

100

–

5

–

100

100

–

Collector-Base Capacitance

at VCB = 10 V, f = 1 MHz

CCBO

–

12

1) Device on fiberglass substrate, see layout

Unit

–

–

–

–

–

–

K/W

K/W

V

V

nA

nA

µA

nA

MHz

pF

.30 (7.5)

.12 (3)

.59 (15)

.03 (0.8)

.47 (12)

0.2 (5)

.04 (1) .08 (2)

.04 (1)

.08 (2)

.06 (1.5)

.20 (5.1)

Dimensions in inches (millimeters)

Layout for RthJA test

Thickness: Fiberglass 0.059 in (1.5 mm)

Copper leads 0.012 in (0.3 mm)

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