BC817-16 查看數據表（PDF） - Infineon Technologies
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BC817-16 Datasheet PDF : 5 Pages
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BC817, BC818
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 10 mA, IB = 0
BC817
45
-
BC818
25
-
V
-
-
Collector-base breakdown voltage
V(BR)CBO
IC = 10 µA, IE = 0
BC817
50
-
-
BC818
30
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 25 V, IE = 0
Collector cutoff current
VCB = 25 V, IE = 0 , TA = 150 °C
Emitter cutoff current
VEB = 4 V, IC = 0
DC current gain 1)
IC = 100 mA, VCE = 1 V
V(BR)EBO 5
-
-
ICBO
-
- 100 nA
ICBO
-
-
50 µA
IEBO
-
- 100 nA
hFE
hFE-grp.16
hFE-grp.25
hFE-grp.40
-
100 160 250
160 250 400
250 350 630
DC current gain 1)
IC = 300 mA, VCE = 1 V
hFE
hFE-grp.16
hFE-grp.25
hFE-grp.40
60
-
-
100 -
-
170 -
-
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
VCEsat
-
-
0.7 V
Base-emitter saturation voltage 1)
IC = 500 mA, IB = 50 mA
VBEsat
-
-
1.2
1) Pulse test: t ≤ 300µs, D = 2%
2
Nov-29-2001
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