BC817-16 查看數據表（PDF） - Kodenshi Auk Co., LTD
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BC817-16 Datasheet PDF : 4 Pages
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BC817
NPN Silicon Transistor
Descriptions
• High current application
• Switching application
PIN Connection
Features
3
1
• Suitable for AF-Driver stage and low power
output stages
2
• Complementary pair with BC807
SOT-23
Ordering Information
Type NO.
BC817
Marking
Package Code
NA □ □
①②③
① Device Code ② hFE Rank ③ Year&Week Code
SOT-23
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
50
35
5
800
200
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Emitter breakdown voltage BVCEO IC=1mA, IE=0
Base-Emitter turn on voltage
VBE(ON) VCE=1V, IC=300mA
Collector-Emitter saturation voltage VCE(sat) IC=500mA, IB=50mA
Collector cut-off current
DC current gain
ICBO
hFE*
VCB=25V, IE=0
VCE=1V, IC=100mA
Transition frequency
fT
VCB=5V, IC=10mA
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
* : hFE rank / 16(A) : 100 ~ 250, 25(B) : 160 ~ 400, 40(C) : 250 ~ 630
(Ta=25°C)
Min. Typ. Max. Unit
35
-
-
V
-
-
1.2
V
-
-
700 mV
-
-
100 nA
100
-
630
-
-
100
-
MHz
-
16
-
pF
KSD-T5C025-000
1
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