BC817-40 查看數據表（PDF） - PANJIT INTERNATIONAL
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BC817-40 Datasheet PDF : 3 Pages
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ELECTRICAL CHARACTERISTICS(TJ=25oC,unless otherwise notes)
PARAMETER
Collector-Emitter Breakdown Voltage (Ic=10mA, IB=0)
Collector-Emitter Breakdown Voltage (VEB=0V, Ic=10uA
Emitter-Base Breakdown Voltage (IE=1.0uA,Ic=0)
Emitter-Base Cutoff Current (VEB=5V)
Collector-Base Cutoff Current (VCB=20V,IE=0)
DC Current Gain
(Ic=100mA,VCE=1V)
(Ic=500mA,VcE=1V)
Collector-Emitter Saturation Voltage (Ic=500mA ,I B=50mA)
Base-Emitte Voltage (Ic=500mA,VCE=1.0V)
Collector-Base Capacitance (VCB=10v,I E=0,f=1MHz)
Current Gain-Bandwidth Product (Ic=10mA,VcE=5V,f=100MHz)
TJ =150OC
BC817-16
BC817-25
BC817-40
SYMBOL
V(BR)CEO
V(BR)CES
V(BR)EBO
I EBO
MIN.
45
50
5.0
-
I CBO
-
-
100
160
hFE
250
40
VCE(SAT)
VBE(ON)
CCBO
fT
-
-
-
100
TYP.
-
-
-
-
-
-
-
-
-
MAX. UNIT
-
V
-
V
-
V
100
nA
100
nA
5.0
uA
250
400
600
-
-
-
0.7
V
-
1.2
V
5.0
-
pF
-
-
M Hz
ELECTRICAL CHARACTERISTICS CURVES
300
250
200
150
100
50
VCE = 1V
0
0.01
0.1
Fig. 1.
1
10
100
Collector Current, IC (mA)
BC817-16 Typical hFE vs. IC
1000
700
600
500
400
300
200
100
0
0.01
0.1
VCE = 1V
1
10
100
Collector Current, IC (mA)
Fig. 3. BC817-40 Typical hFE vs. IC
1000
STAD-JUL.13.2005
450
400
350
300
250
200
150
100
50
0
0.01
0.1
Fig. 2.
VCE = 1V
1
10
100
1000
Collector Current, IC (mA)
BC817-25 Typical hFE vs. IC
100
CIB (EB)
10
COB (EB)
1
0.1
1
10
100
Reverse Voltage, VR (V)
Fig. 4. Typical Capacitances
PAGE . 2
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