BC817G-X-AE3-R 查看數據表（PDF） - Unisonic Technologies

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BC817G-X-AE3-R

NPN GENERAL PURPOSE AMPLIFIER

Unisonic Technologies 

BC817

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

SOT-23

SOT-323

VCES

VCEO

VEBO

IC

PC

50

V

45

V

5.0

V

1.5

A

310

mW

200

mW

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-65 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-OFF Current

ON CHARACTERISTICS

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

„ CLASSIFICATION OF hFE1

RANK

RANGE

16

100-250

SYMBOL

BVCEO

BVCES

BVEBO

ICBO

hFE1

hFE2

VCE(SAT)

VBE(ON)

TEST CONDITIONS

IC=10mA, IB=0

IC=100μA,IE=0

IE=10μA, Ic=0

VCB=20V

VCB=20V,Ta=150°C

IC=100mA,VCE=1.0V

IC =500mA, VCE=1.0V

IC =500mA,IB=50mA

IC =500mA, VCE=1.0V

25

160-400

MIN TYP MAX UNIT

45

V

50

V

5

V

100 nA

5 μA

See Classification

40

0.7 V

1.2 V

40

250-600

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R206-025.E

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