BC817-16 查看數據表（PDF） - Weitron Technology

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BC817-16

General Purpose Transistor NPN Silicon

Weitron Technology 

BC817-16/BC817-25

BC817-40

1000

VCE = 1 V

TJ = 25 C

100

10

0.1

1.0

10

100

IC, COLLECTOR CURRENT (AMP)

1000

Figure 1. DC Current Gain

1.0

TJ = 25 C

0.8

0.6

0.4

IC = 10 mA

100 mA 300 mA

500 mA

0.2

0

0.01

0.1

1

10

100

IB , BASE CURRENT (mA)

Figure 2. Saturation Region

1.0

TA = 25 C

0.8

0.6

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = 1 V

0.4

0.2

VCE(sat) @ I C/I B = 10

0

1

10

100

1000

IC, COLLECTOR CURRENT (mA)

Figure 3. "On" V oltages

100

+1

VC for VCE(sat)

0

10

-1

-2

VB for VBE

1

1

10

100

1000

0.1

IC, COLLECTOR CURRENT (mA)

Figure 4. T emperature Coefficients

Cib

Cob

1

10

100

VR, REVERSE VOLTAGE (VOLTS)

Figure 5. Capacitances

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