BC846 查看數據表（PDF） - TY Semiconductor

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产品描述 (功能)

生产厂家

BC846

NPN Transistors

TY Semiconductor 

SMD Type

TransistIoCrs

Product specification

BC846,BC847,BC848

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min Typ Max Unit

Collector cutoff current

ICBO

ICBO

VCB = 30 V, IE = 0

VCB = 30 V, IE = 0 , Tj = 150

15 nA

5 ìA

Emitter cutoff current

IEBO VEB = 5 V, IC = 0

100 nA

BC846

110

450

BC847

110

800

DC current gain

BC846A,BC847A

hFE IC = 2 mA; VCE = 5 V

110 180 220

BC846B,BC847B,BC848B

200 290 450

BC847C

420 520 800

Collector-emitter saturation voltage

IC = 10 mA; IB = 0.5 mA

VCE(sat)

IC = 100 mA; IB = 5 mA; *

90 250 mV

200 600 mV

Base-emitter saturation voltage

IC = 10 mA; IB = 0.5 mA

VBE(sat)

IC = 100 mA; IB = 5 mA; *

700

mV

900

mV

Base-emitter voltage

IC = 2 mA; VCE = 5 V

VBE

IC = 10 mA; VCE = 5 V

580 660 700 mV

770 mV

Collector capacitance

CC VCB = 10 V; IE = Ie = 0;f = 1 MHz

2.5

pF

Transition frequency

fT

VCE = 5 V; IC = 10 mA;f = 100 MHz

100

MHz

Noise figure

NF

IC = 200ìA; VCE = 5 V;RS = 2 kÙ; f

= 1 kHz;B = 200 Hz

2 10 dB

* Pulse test: tp 300µs, ä 0.02.

hFE Classification

TYPE

Marking

BC846

1D

TYPE

Marking

BC847

1H

TYPE

Marking

BC848

1K

BC846A

1A

BC847A

1E

BC846B

1B

BC847B

1F

BC847C

1G

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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