BC846(2005) 查看數據表（PDF） - Unisonic Technologies
零件编号
产品描述 (功能)
生产厂家
BC846 Datasheet PDF : 4 Pages
| |||
BC846-BC850
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
UNIT
BC846
80
V
Collector-Base Voltage
BC847 / BC850 VCBO
50
V
BC848 / BC849
30
V
BC846
65
V
Collector-Emitter Voltage
BC847 / BC850 VCEO
45
V
BC848 / BC849
30
V
BC846 / BC847
6
V
Emitter-Base Voltage
BC848 / BC849 / VEBO
BC850
5
V
Collector Current (DC)
Ic
100
mA
Collector Dissipation
SOT-23
310
mW
SOT-323
PD
200
mW
Junction Temperature
Storage Temperature
TJ
+150
°C
TSTG
-40 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
BC846/BC847/BC848
Noise Figure BC849/BC850
BC849
BC850
SYMBOL
TEST CONDITIONS
ICBO VCB=30V, IE=0
hFE VCE=5.0V, Ic=2.0mA
VCE(SAT)
Ic=10mA,IB=0.5mA
Ic=100mA,IB=5.0mA
VBE(SAT)
Ic=10mA,IB=0.5mA
Ic=100mA,IB=5.0mA
VBE(ON)
VCE=5.0V,Ic=2.0mA
VCE=5.0V,Ic=10mA
fT
VCE=5.0V,Ic=10mA
f=100MHz
Cob VCB=10V, IE=0, f=1.0MHz
Cib VEB=0.5V, IC=0, f=1.0MHz
VCE=5V, Ic=200µA,
NF
f=1KHz, RG=2KΩ
VCE=5V, IC=200µA,
RG=2KΩ, f=30~15000Hz
MIN TYP MAX UNIT
15 nA
110
800
90 250 mV
200 600 mV
700
mV
900
mV
580 660 700 mV
720 mV
300
MHz
3.5 6 pF
9
pF
2 10 dB
1.2 4 dB
1.4 4 dB
1.4 3 dB
CLASSIFICATION OF hFE
RANK
RANGE
A
110-220
B
200-450
C
420-800
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R206-027,C
Share Link: 