BC846BDW1T1 查看數據表（PDF） - ON Semiconductor

零件编号

产品描述 (功能)

生产厂家

BC846BDW1T1

NPN Duals Dual General Purpose Transistors

ON Semiconductor 

BC846BDW1T1, BC847BDW1T1, BC848CDW1T1

1.0

D = 0.5

0.2

0.1

0.1

0.05

0.02

0.01 0.01

SINGLE PULSE

0.001

0

1.0

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

ZqJA(t) = r(t) RqJA

RqJA = 328°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) RqJC(t)

10

100

1.0 k

10 k

100 k

1.0 M

t, TIME (ms)

Figure 13. Thermal Response

−200

1s

3 ms

−100

−50

TA = 25°C TJ = 25°C

BC558

−10

BC557

BC556

−5.0

−2.0

−1.0

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

−5.0 −10

−30 −45 −65 −100

VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 14. Active Region Safe Operating Area

The safe operating area curves indicate IC−VCE limits

of the transistor that must be observed for reliable

operation. Collector load lines for specific circuits must

fall below the limits indicated by the applicable curve.

The data of Figure 14 is based upon TJ(pk) = 150°C; TC

or TA is variable depending upon conditions. Pulse

curves are valid for duty cycles to 10% provided TJ(pk) ≤

150°C. TJ(pk) may be calculated from the data in

Figure 13. At high case or ambient temperatures,

thermal limitations will reduce the power that can be

handled to values less than the limitations imposed by the

secondary breakdown.

http://onsemi.com

5

Share Link: