BC857A(2002) 查看數據表（PDF） - Fairchild Semiconductor
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BC857A Datasheet PDF : 5 Pages
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BC856/857/858/859/860
Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC859, BC860
• Complement to BC846 ... BC850
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
: BC856
: BC857/860
: BC858/859
VCEO
Collector-Emitter Voltage
: BC856
: BC857/860
: BC858/859
VEBO
IC
PC
TJ
TSTG
Emitter-Base Voltage
Collector Current (DC)
Collector Power Dissipation
Junction Temperature
Storage Temperature
3
2
1 SOT-23
1. Base 2. Emitter 3. Collector
Value
-80
-50
-30
-65
-45
-30
-5
-100
310
150
-65 ~ 150
Units
V
V
V
V
V
V
V
mA
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
ICBO
hFE
VCE (sat)
VBE (sat)
VBE (on)
fT
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
VCB= -30V, IE=0
VCE= -5V, IC= -2mA
IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
VCE= -5V, IC= -2mA
VCE= -5V, IC= -10mA
VCE= -5V, IC= -10mA
f=100MHz
Cob
Output Capacitance
VCB= -10V, IE=0, f=1MHz
NF
Noise Figure : BC856/857/858
VCE= -5V, IC= -200µA
: BC859/860
f=1KHz, RG=2KΩ
: BC859
VCE= -5V, IC= -200µA
: BC860
RG=2KΩ, f=30~15000Hz
Min.
110
-600
Typ.
-90
-250
-700
-900
-660
150
2
1
1.2
1.2
Max.
-15
800
-300
-650
-750
-800
Units
nA
mV
mV
mV
mV
mV
mV
MHz
6
pF
10
dB
4
dB
4
dB
2
dB
©2002 Fairchild Semiconductor Corporation
Rev. A2, August 2002
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