BC857B 查看數據表（PDF） - Vishay Semiconductors
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BC857B Datasheet PDF : 9 Pages
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VISHAY
BC856 to BC859
Vishay Semiconductors
Parameter
Test condition
Part
Symbol
Min
Typ
Max
Unit
Output admittance (current gain - VCE = 5 V, - IC = 2 mA, f = 1 kHz
hoe
group B)
30
60
µS
Output admittance (current gain - VCE = 5 V, - IC = 2 mA, f = 1 kHz
hoe
group C)
60
110
µS
Reverse voltage transfer ratio - VCE = 5 V, - IC = 2 mA, f = 1 kHz
hre
1.5 x 10-4
(current gain group A)
Reverse voltage transfer ratio - VCE = 5 V, - IC = 2 mA, f = 1 kHz
hre
(current gain group B)
2 x 10-4
Reverse voltage transfer ratio - VCE = 5 V, - IC = 2 mA, f = 1 kHz
hre
(current gain group C)
3 x 10-4
DC current gain (current gain
group A)
- VCE = 5 V, - IC = 10 µA
hFE
90
DC current gain (current gain
group B)
- VCE = 5 V, - IC = 10 µA
hFE
150
DC current gain (current gain
group C)
- VCE = 5 V, - IC = 10 µA
hFE
270
DC current gain (current gain
group A)
- VCE = 5 V, - IC = 2 mA
hFE
110
180
220
DC current gain (current gain
group B)
- VCE = 5 V, - IC = 2 mA
hFE
200
290
450
DC current gain (current gain
group C)
- VCE = 5 V, - IC = 2 mA
hFE
420
520
800
Collector saturation voltage
- IC = 10 mA, - IB = 0.5 mA
VCEsat
90
300
mV
- IC = 100 mA, - IB = 5 mA
VCEsat
250
650
mV
Base saturation voltage
- IC = 10 mA, - IB = 0.5 mA
VBEsat
700
mV
- IC = 100 mA, - IB = 5 mA
VBEsat
900
mV
Base - emiter voltage
- VCE = 5 V, - IC = 2 mA
VBE
600
660
750
mV
- VCE = 5 V, - IC = 10 mA
VBE
820
mV
Collector-emitter cut-off current - VCE = 80 V
BC856
ICES
0.2
15
nA
- VCE = 50 V
BC857
ICES
0.2
15
nA
- VCE = 30 V
BC858
ICES
0.2
15
nA
BC859
ICES
0.2
15
nA
- VCE = 80 V, Tj = 125 °C
BC857
ICES
4
µA
- VCE = 50 V, Tj = 125 °C
BC857
ICES
4
µA
- VCE = 30 V, Tj = 125 °C
BC858
ICES
4
µA
BC859
ICES
4
µA
Collector-base cut-off current - VCB = 30 V
ICBO
15
µA
- VCB = 30 V, Tj = 150 °C
ICBO
5
µA
Document Number 85135
Rev. 1.2, 08-Sep-04
www.vishay.com
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