BC856AW 查看數據表（PDF） - Secos Corporation.

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BC856AW

Surface mount Si-Epitaxial PlanarTransistors

Secos Corporation. 

Elektronische Bauelemente

BC856AW, BW

BC857AW, BW, CW

BC858AW, BW, CW

ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector Cutoff Current

Symbol

Test conditions

MIN

BC856

-80

BC857

VCBO Ic= -10µA, IE=0

-50

BC858

-30

BC856

-65

BC857

VCEO Ic= -10mA, IB=0

-45

BC858

-30

VEBO

IE= -1µA, IC=0

-5

ICBO

VCB=-30V, IE=0

DC current gain

BC856AW,857AW,858AW

125

BC856BW,857BW,858BW

hFE

VCE= -5V, IC= -2 mA

220

BC857CW,BC858CW

420

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Collector output capacitance

VCE(sat) IC= -100mA, IB = -5mA

VBE(sat) IC= -100mA, IB = -5mA

fT

VCE= -5V, IC= -10mA

f=100MHz

100

Cob

VCB=-10V,f=1MHz

MAX UNIT

V

V

-15

250

475

800

-0.65

-1.1

4.5

V

nA

V

V

MHz

pF

http://www.SeCoSGmbH.com

01-Jun-2002 Rev. A

Any changing of specification will not be informed individual

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