BC868 查看數據表（PDF） - Willas Electronic Corp.
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BC868 Datasheet PDF : 2 Pages
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WILLAS
S1.O0ATS-U8R9FACPElMaOsUtNicT -SECHnOcTaTKpYsBuARlaRtIEeR TRErCaTnIFsIEiRsSto-20rVs- 200V
FM120-M+
BC868 THRU
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
TRANSISFTeOaRt(uNrPeNs)
FEATUR•EBSatch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
z High• Lcouwrrpernotfile surface mounted application in order to
z Low vooplttiamgizee board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
MAXIMU•MGuRaArdTriInNgGfoSr o(vTear=vo2lt5a℃ge purnotleecstisono. therwise noted)
• Ultra high-speed switching.
Symbo•l Silicon epitaxPiaarl apmlaneater rchip, metal silicoVnajluunection.Unit
Package oSuOtlTi-n89e
SOD-123H
0.146(3.7)
0.130(3.3)
1. BASE
2. COLLECTOR
3. EMITTER
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
VCBO
• LeCado-llferecetopr-aBrtassme eVeotlteangveironmental stand3a2rds of
MIL-STD-19500 /228
V
VCEO • RoCHoSllpercotdourc-Et fmoritpteacr kVinogltacogdee suffix "G" 20
V
Halogen free product for packing code suffix "H"
VEBO
IC
PC
y TJ
r Tstg
MeEcmhittaern-BiacsaelVdoltaagtae
5
V
• EpCooxylle:cUtoLr9C4-uVr0rernatte-Cd oflnatmineuroeutsardant 1
A
• CaCsoell:eMctooldr ePdopwlearstDicis, SsiOpaDt-io1n23H
500
mW
•
TeJrmunincatilosn:PTleamtepdetreartmurienals,
solderable
p1e5r0MIL-STD℃-75
,
0
Storage TMeemthpoedra2t0u2re6
-55~150 ℃
• Polarity : Indicated by cathode band
Pb-Free package is available
0.040(1.0)
RoHS product for packing code suffix ”G” 0.024(0.6)
Halogen0.f0r31e(0e.8) pTypr.oduct for packing code suffix 0.031(0.8) T“yHp. ”
Dimensions in inches and (millimeters)
a ELECTR•ICMAouLntCinHg APoRsAitioCnT:EARnyISTICS (Ta=25℃ unless otherwise specified)
• Weight : Approximated 0.011 gram
in Parameter
Symbol Test conditions
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Min Typ Max Unit
CoRllaeticntgosra-bt a25s℃e barmeabkiednot wtemn pveoralttaugreeunless othVer(BwRis)CeBsOpeciIfCie=d1.00μA,IE=0
Single phase half wave, 60Hz, resistive of inductive load.
lim CoFloler cctaopra-ceitmiveittleoar db, rdeearaktdeocwurnrevntobltya2g0e%
V(BR)CEO IC=1mA,IB=0
32
V
20
V
RATINGS
EmMaitrtkeinrg-bCaosdee breakdown voltage
e CoMlalexicmtuomr cRuect-uorrfefnct PuerareknRteverse Voltage
Maximum RMS Voltage
r EmMaitxtiemrumcuDt-CoBffloccukirnrgeVnotltage
P Maximum Average Forward Rectified Current
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
V(BR)EBO IE=11200μA,IC1=30
14
15
5
16
18
10
V
115 120
ICVBORRM
20
30
VCB=25V,IE=0
40
50
60
VRMS
14
21
28
35
42
80
100
150
200
0.1
μA
V
56
70
105
140 V
IEBVODC VEB2=05V,IC=300
40
50
60
80
100 0.1 150μA 200 V
IO
1.0
A
hFE(1) VCE=1V,IC=500mA
Peak Forward Surge Current 8.3 ms single half sine-wave IFSM
85
375
30
A
DCsupceurirmrpeonsetdgoaninrated load (JEDEC method)
hFE(2) VCE=1V,IC=1A
60
Typical Thermal Resistance (Note 2)
RΘJA
40
℃
Typical Junction Capacitance (Note 1)
Operating Temperature Range
hFE(C3)J
TJ
VCE=10V,IC=5mA
-55 to +125
12500
-55 to +150
CoSltoleracgteorT-eemmpeitrtaeturresaRtaunrgaetion voltage
VCET(SsaTt)G IC=1A,IB=100mA
- 65 to +175
0.5
V
CHARACTERISTICS
BMasaexi-meummitFtoerrwvaordltVaoglteage at 1.0A DC
VSBYEM1 BOL FVMC1E2=0-1M0HVF,IMC1=350-mMHAFM140-MH FM150-MH FM160-MH FM180-M0.H6F2M1100-MH FM1150-MVH FM1200-MH U
VF
0.50
0.70
0.85
0.9
0.92 V
Maximum Average Reverse Current at @T A=25℃ VBEI2R
Rated DC Blocking Voltage
@T A=125℃
VCE=1V,IC=1A
0.5
1
V
m
10
Transition frequency
NOTES:
fT
VCE=5V,IC=10mA,f=100MHz
40
MHz
C1L- MAeSasSurIeFdIaCt 1AMTHIZOaNndOapFpliehd rFeEv(e1r)se voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Rank
BC868-10
BC868-16
BC868-25
Range
85-160
100-250
160-375
Marking
CBC
CCC
CDC
2012-20012-06
WILLAWS IELLLEACSTERLOECNTICROCNOIRCPC.ORP
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