BC875 查看數據表（PDF） - NXP Semiconductors.

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BC875

NPN Darlington transistors

NXP Semiconductors. 

Philips Semiconductors

NPN Darlington transistors

Product specification

BC875; BC879

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

ICES

collector-emitter cut-off current

VBE = 0 V

BC875

VCE = 45 V

BC879

VCE = 80 V

IEBO

emitter-base cut-off current

VEB = 4 V; IC = 0 A

hFE

DC current gain

VCE = 10 V; see Fig.2

IC = 150 mA

IC = 0.5 A

VCEsat

collector-emitter saturation voltage IC = 0.5 A; IB = 0.5 mA

IC = 1 A; IB = 1 mA

VBEsat

base-emitter saturation voltage

IC = 1 A; IB = 1 mA

fT

transition frequency

VCE = 5 V; IC = 0.5 A; f = 100 MHz

Switching times (between 10% and 90% levels)

ton

turn-on time

toff

turn-off time

ICon = 500 mA; IBon = 0.5 mA;

IBoff = −0.5 mA

MIN. TYP. MAX. UNIT

−

−

50 nA

−

−

50 nA

−

−

50 nA

1000 −

−

2000 −

−

−

−

1.3

−

−

1.8

−

−

2.2

−

200 −

V

V

V

MHz

−

500 −

ns

−

1300 −

ns

5000

handbook, full pagewidth

hFE

4000

3000

2000

1000

0

10−1

VCE = 10 V.

MGD838

1

10

102

103

IC (mA)

Fig.2 DC current gain; typical values.

2004 Nov 05

4

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