BCX68 查看數據表（PDF） - TY Semiconductor
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BCX68 Datasheet PDF : 2 Pages
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SMD Type
Transistors
Electrical Characteristics Ta = 25
Parameter
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
DC current gain *
DC current gain *
DC current gain *
Collector-emitter saturation voltage *
Base-emitter voltage *
Transition frequency
* Pulse test: t 300ìs, D = 2%.
Product specification
BCX68
Symbol
Testconditons
Min Typ Max Unit
V(BR)CEO IC = 30 mA, IB = 0
20
V
V(BR)CBO IC = 10 ìA, IB = 0
25
V
V(BR)EBO IE = 1 ìA, IC = 0
5
V
ICBO
VCB = 25 V, IE = 0
VCB = 25 V, IE = 0 , TA = 150
100 nA
100 ìA
hFE
IC = 500 mA, VCE = 1 V
50
85
375
hFE
IC = 500 mA, VCE = 1 V
85 100 160
100 160 250
160 250 375
hFE
IC = 1A, VCE = 1 V
60
VCE(sat) IC = 1 A, IB = 100 mA
0.5
VBE(ON)
IC = 5 mA, VCE = 10 V
IC = 1 A, VCE = 1 V
0.6
V
1
fT
IC = 100 mA, VCE = 5 V, f = 20 MHz
100
MHz
hFE Classification
TYPE
Marking
BCX68
CA
BCX68-10
CB
BCX68-16
CC
BCX68-25
CD
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