BD139(2003) 查看數據表（PDF） - Micro Commercial Components
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BD139 Datasheet PDF : 2 Pages
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MCC
omponents
20736 Marilla Street Chatsworth
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• DC Current Gain - hFE = 40 (Min) @IC = 150mAdc
• Complementary with BD136, BD138, BD140
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Rating
Collector-Emitter Voltage
BD135
BD137
BD139
Collector-Base Voltage
BD135
BD137
BD139
Emitter-Base Voltage
Collector Current
Base Current
: Total Device Dissipation @TA=25
: Derate above 25
: Total Device Dissipation @TC=25
: Derate above 25
Operating & Storage Temperature Range
Maximum Thermal Resistance Junction to
Case
Maximum Thermal Resistance Junction to
Ambient Air
Symbol
VCEO
VCBO
VEBO
IC
IB
PD
PD
TJ, TSTG
R-&
R-$
Value
45
60
80
45
60
100
5.0
1.5
0.5
1.25
10
12.5
100
-55 to +150
10
100
Unit
Vdc
Vdc
Vdc
Adc
Adc
: Watt
mW/
Watt
:: mW/
:/W
:/W
BD135
BD137
BD139
Power Transistors
NPN Silicon
45,60,80 Volts
TO-126
A
K
D
E
R
B
F
M
N
G
P
L
H
C
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Symbol
Parameter
Min
Max Units
2)) &+$5$&7(5,67,&6
BVCEO
ICBO
IEBO
hFE
VCE(sat)
VBE(on)
Collector-Emitter Sustaining Voltage*
(IC=30mA,IB=0) BD135
45
BD137
60
BD139
80
Collector Cutoff Current
: (VCB=30Vdc, IE=0)
(VCB=30Vdc, IE=0, TC=125 )
Emitter Cutoff Current
(VBE=5.0Vdc, IC=0)
DC Current Gain*
(IC=5mAdc, VCE=2Vdc)
25
(IC=0.5Adc, VCE=2Vdc)
25
(IC=150mAdc, VCE=2Vdc)
40
Collector-Emitter Saturation Voltage
(IC=500mAdc, IB=50mAdc)
Base-Emitter ON Voltage
(VCE=2V, IC=0.5A)
Vdc
0.1
µAdc
10
10
µAdc
250
0.5
Vdc
1
Vdc
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
JJ
Q
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Revision: 2
www.mccsemi.com
2003/04/30
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