BD139 查看數據表（PDF） - Tiger Electronic
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BD139 Datasheet PDF : 1 Pages
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TIGER ELECTRONIC CO.,LTD
Product specification
Complementary Silicon Power Ttransistors
BD139 / BD140
DESCRIPTION
It is intented for use in power
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter
l
Value Unit
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
VCEO
VEBO
IC
IB
Ptot
Tj
Tstg
80 V
5
V
1.5 A
0.5 A
12.5 W
150 oC
-55~150 oC
TO-126
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter
Symbol Test Conditions
Collector Cut-off Current
ICEO VCB=80V, IE=0
Emitter Cut-off Current
IEBO VEB=5V, IC=0
Collector-Emitter Sustaining Voltage
DC Current Gain
VCEO
hFE(1)
hFE(2)
IC=30mA, IB=0
VCE=2V, IC=0.5A
VCE=2V, IC=150mA
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
IC=0.5A,IB=50mA
VCE=2V,IC=0.5A
Current Gain Bandwidth Product
fT
VCE=10V,IC=500mA
Min.
—
—
80
25
40
—
—
3
Typ.
—
—
—
—
—
—
—
—
Max. Unit
10 uA
10 uA
—V
—
250
0.5 V
1.0 V
— MHz
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