BD246B 查看數據表（PDF） - SavantIC Semiconductor
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BD246B Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BD250/A/B/C
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD250
V(BR)CEO
Collector-emitter
breakdown voltage
BD250A
BD250B
IC=-30mA ;IB=0
BD250C
VCEsat-1
VCEsat-2
VBE-1
VBE-2
ICEO
Collector-emitter saturation voltage
IC=-15A ;IB=-1.5A
Collector-emitter saturation voltage
IC=-25A ;IB=-5A
Base-emitter on voltage
IC=-15A ; VCE=-4V
Base-emitter on voltage
IC=-25A ; VCE=-4V
Collector
cut-off current
BD250/250A
VCE=-30V IB=0
BD250B/250C VCE=-60V IB=0
IEBO
Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-1.5A ; VCE=-4V
hFE-2
DC current gain
hFE-3
DC current gain
Switching times
IC=-15A ; VCE=-4V
IC=-25A ; VCE=-4V
ton
Turn-on time
toff
Turn-off time
IC=-5A;
IB1=-IB2=-0.5A
RL=5A
MIN
-45
-60
-80
-100
TYP.
MAX UNIT
V
-1.8
V
-4.0
V
-1.6
V
-3.0
V
-1.0
mA
-1.0
mA
25
10
5
0.2
µs
0.4
µs
2
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