SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BD810
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A; IB=0
VCEsat Collector-emitter saturation voltage IC=-3 A;IB=-0.3 A
VBE
ICBO
IEBO
hFE-1
Base-emitter voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-4A ; VCE=-2V
VCB=-80V; IE=0
VEB=-5V; IC=0
IC=-2A ; VCE=-2V
hFE-2
DC current gain
IC=-4A ; VCE=-2V
fT
Transition frequency
IC=-1A ; VCE=-10V;f=1.0MHz
MIN TYP. MAX UNIT
-80
V
-1.1
V
-1.6
V
-1.0 mA
-2.0 mA
30
15
1.5
MHz
2