BF420 查看數據表（PDF） - ON Semiconductor
零件编号
产品描述 (功能)
生产厂家
BF420 Datasheet PDF : 4 Pages
| |||
ON Semiconductort
High Voltage Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
BF420 BF422
300
250
300
250
5.0
500
625
5.0
1.5
12
–55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
Symbol
RqJA
RqJC
Max
200
83.3
Unit
°C/W
°C/W
BF420
BF422
1
2
3
CASE 29–11, STYLE 14
TO–92 (TO–226AA)
COLLECTOR
2
3
BASE
1
EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
BF420
300
BF422
250
Collector–Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
BF420
300
BF422
250
Emitter–Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO
BF420
5.0
BF422
5.0
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
ICBO
BF420
—
BF422
—
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0)
IEBO
BF420
—
BF422
—
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
Max
Unit
Vdc
—
—
Vdc
—
—
Vdc
—
—
µAdc
0.01
—
nAdc
100
—
© Semiconductor Components Industries, LLC, 2001
1
March, 2001 – Rev. 2
Publication Order Number:
BF420/D
Share Link: 