BF422L-T92-K 查看數據表（PDF） - Unisonic Technologies
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BF422L-T92-K Datasheet PDF : 4 Pages
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BF422
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
250
V
Collector-Emitter Voltage
VCEO
250
V
Emitter-base voltage
VEBO
5
V
Collector current (DC)
IC
50
mA
collector current (Peak)
ICP
100
mA
base current
IB
50
mA
Collector Power dissipation
PC
625
mW
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0°C ~70°C operating temperature range
and assured by design from –20°C ~85°C.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector Cut-Off Current
Emitter Cut-Off Current
DC current gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition frequency
Reverse Transfer Capacitance
SYMBOL
TEST CONDITIONS
ICBO VCB= 200V, IE=0
IEBO VEB= 5V, IC=0
hFE VCE=20V, IC=25mA
VCE(SAT) IC= 30mA, IB= 5mA
VBE VCE=-20V, IC=25mA
fT
VCE= 10V , IC= 10mA
Cre VCB= 30V, IE=0, f=1MHz
MIN TYP MAX UNIT
10 nA
50 nA
50
0.6 V
0.75
V
60
MHz
1.6 pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R201-063.C
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