BLF1043 查看數據表（PDF） - NXP Semiconductors.

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BLF1043

UHF power LDMOS transistor

NXP Semiconductors. 

BLF1043

UHF power LDMOS transistor

Rev. 8 — 6 May 2013

Product data sheet

1. Product profile

1.1 General description

10 W LDMOS power transistor for base station applications at frequencies from HF to

1000 MHz.

Table 1. Typical performance

RF performance at Th = 25 C in a common source test circuit.

Mode of operation f

VDS IDQ PL

Gp

D

(MHz)

(V) (mA) (W)

(dB) (%)

CW, 2-tone, class-AB f1 = 960; f2 = 960.1 26 85 10 (PEP) 18.5 40

CW, 1-tone, class-AB f = 960

26 85 10

18.5 52

dim

(dBc)

-31

-

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

1.2 Features and benefits

 Typical 2-tone performance at a supply voltage of 26 V and IDQ of 85 mA

 Output power = 10 W (PEP)

 Gain = 18.5 dB

 Efficiency = 40%

 dim = -31 dBc

 Easy power control

 Excellent ruggedness

 High power gain

 Excellent thermal stability

 Designed for broadband operation (HF to 1000 MHz)

 No internal matching for broadband operation

 SMD package.

1.3 Applications

 RF power amplifiers for GSM, EDGE and CDMA base stations and multicarrier

applications in the 800 to 1000 MHz frequency range

 Broadcast drivers.

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