BLF1043 查看數據表（PDF） - NXP Semiconductors.

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BLF1043

UHF power LDMOS transistor

NXP Semiconductors. 

NXP Semiconductors

BLF1043

UHF power LDMOS transistor

2. Pinning information

Table 2.

Pin

1

2

3

Pinning

Description

drain

gate

source, connected to flange

Simplified outline Graphic symbol

1

1

3

2

2

3

sym112

3. Ordering information

Table 3. Ordering information

Type number Package

Name

Description

BLF1043

-

ceramic surface mounted package; 2 leads

Version

SOT538A

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

VDS

drain-source voltage

-

VGS

gate-source voltage

-

ID

drain current (DC)

-

Tstg

storage temperature

-65

Tj

junction temperature

-

5. Thermal characteristics

Max

Unit

65

V

15

V

2.2

A

+150

C

200

C

Table 5.

Symbol

Rth j-h

Thermal characteristics

Parameter

thermal resistance from junction

to heatsink

Conditions

Tmb = 25 C

Typ

[1] 9

Unit

K/W

[1] Thermal resistance is determined under RF operating conditions. Typical value with device soldered on PC

board with 32 via holes (diameter 0.3 mm) and thermal compound between PCB and heatsink.

BLF1043

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 8 — 6 May 2013

© NXP B.V. 2013. All rights reserved.

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