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BR88 查看數據表(PDF) - CHONGQING PINGYANG ELECTRONICS CO.,LTD

零件编号
产品描述 (功能)
生产厂家
BR88
CHONGQING
CHONGQING PINGYANG ELECTRONICS CO.,LTD CHONGQING
BR88 Datasheet PDF : 1 Pages
1
CHONGQING PINGYANG ELECTRONICS CO.,LTD.
BR805 THRU BR810
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE50-1000V
CURRENT8.0A
FEATURES
·Surge overload ratings-125 Amperes
·Low forward voltage drop
MECHANICAL DATA
·Case:Metal or plastic shell with plastic encapsulation
·Epoxy: UL 94V-0 rate flame retardant
·Lead: MIL-STD- 202E, Method 208 guaranteed
·Polarity: Symbols molded or marked on body
·Mounting: Thru hole for 6# screw
·Weight: 6.9 grams
KBPC-8/10
.052(1.3) DIA.
.048(1.2) TYP.
.296(7.5)
.255(6.5)
.750
(19.1)
MIN.
.770(19.6)
.730(18.5)
.520(13.2)
.480(12.2)
HOLE FOR
NO. 6 SCREW
.520(13.2) .770(19.6)
.480(12.2) .730(18.5)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS
Ratings at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL BR805 BR81 BR82 BR84 BR86 BR88 BR810 units
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
VRRM 50 100 200 400 600 800 1000 V
VRMS 35 70 140 280 420 560 700 V
VDC 50 100 200 400 600 800 1000 V
Maximum Average Forward rectified Output
Current at TC=75°C
Io
8.0
A
Peak Forward Surge Current 8.3ms single half
sine-wave superimposed on rate load (JEDEC IFSM
method)
250
A
Maximum Forward Voltage Drop per element at
4.0A DC
VF
1.1
V
Maximum DC Reverse Current
at Rated DC Blocking Voltage
per element
I2t Rating for Fusing (t<8.3ms)
@ TA=25°C
IR
@ TA=100°C
I2t
10
µA
500
166
A2Sec
Typical Junction Capacitance (Note 1)
CJ
200
pF
Notes: 1.Measured at 1MHz and applied reverse voltage of 4.0 volts
2. Thermal Resistance from Junction to Ambient and fromjunction to lead mounted on P.C.B. with
0.5×0.5(13×13mm) copper pads.
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