BS809 查看數據表（PDF） - General Semiconductor

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BS809

DMOS Transistors (N-Channel)

General Semiconductor 

BS809

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Drain-Source Breakdown Voltage

at ID = 100 µA, VGS = 0 V

Gate-Body Leakage Current, Forward

at VGSF = 20 V, VDS = 0 V

Gate-Body Leakage Current, Reverse

at VGSR = 20 V, VDS = 0 V

V(BR)DSS

400

430

IGSSF

–

–

IGSSR

–

–

Drain Cutoff Current

at VDS = 400 V, VGS = 0 V

Gate-Source Threshold Voltage

at VGS = VDS, ID = 250 µA

IDSS

–

–

VGS(th)

1

1.5

Drain-Source ON Resistance

at VGS = 5 V, ID = 100 mA

RDS(on)

–

18

Capacitances

at VDS = 25 V, VGS = 0 V, f = 1 MHz

Input Capacitance

Output Capacitance

Feedback Capacitance

CiSS

–

80

COSS

–

20

CrS

–

10

Switching Times

at VGS = 10 V, VDS = 10 V, RD = 100 Ω

Turn-On Time

Turn-Off Time

ton

–

10

toff

–

50

Thermal Resistance Junction to Substrate

Backside

RthSB

Thermal Resistance Junction to Ambient Air

RthJA

–

–

1) Device on fiberglass substrate, see layout

.30 (7.5)

.12 (3)

.59 (15)

.03 (0.8)

.47 (12)

0.2 (5)

.04 (1) .08 (2)

.04 (1)

.08 (2)

Layout for RthJA test

Thickness: Fiberglass 0.059 in (1.5 mm)

Copper leads 0.012 in (0.3 mm)

.06 (1.5)

.20 (5.1)

Dimensions in inches (millimeters)

Max.

Unit

–

V

100

nA

100

nA

500

nA

2.5

V

22

Ω

–

pF

–

pF

–

pF

–

–

3201)

4501)

ns

ns

K/W

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