BSS123 查看數據表（PDF） - Weitron Technology

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BSS123

Power MOSFET N-Channel

Weitron Technology 

BSS123

2.0

1.8 Ta =25 C

1.6

VGS=10V

1.4

9V

1.2

8V

1.0

7V

0.8

0.6

6V

0.4

5V

0.2

4V

3V

0

0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10

VDS ,DRAIN SOURCE VOLTAGE(V)

FIG.1 Ohmic Region

1.0

VGS=10V

0.8

0.6

0.4

0.2

-55 C

25 C

125 C

0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10

VGS,GATE SOURCE VOLTAGE(V)

FIG.2 Transfer Characteristics

2.4

2.2

2.0 VGS=10V

ID =200mA

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

- 60

- 20

+ 20

+ 60

+ 100

T ,TEMPERATURE( C)

FIG.3 Temperature Versus Static

Drain-Source On-Resistance

+ 140

1.2

1.05

1.1

1.10

1.0

0.95

0.9

0.85

0.8

0.75

0.7

- 60

VDS=VGS

ID =1.0mA

- 20

+ 20

+ 60

+ 100

+ 140

T ,TEMPERATURE( C)

FIG.4 Temperature Versus Gate

Threshold Voltage

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